| 近期发表的主要学术论文： 1. Interface polarons in a realistic heterojunction potential, S. L. Ban, J. E. Hasbun, Eur. Phys. J B8,453-461(1999) 2. Donor level in a quasi-two dimensional heterojunction system, S. L. Ban, J.E.Hasbun, Solid State Commun. 109,93-98(1999) 3. Bound polarons in a polar semiconductor heterojunction, S. L. Ban, J.E.Hasbun, Phys. Rev. B 59,3,2276-2283(1999) 4. A novel method for quantum transmission across arbitrary potential barriers, S. L. Ban, J.E.Hasbun, X.X. Liang, Journal of Luminescence 87-89,369-371(2000) 5. Bound polarons in ternary mixed crystals, X.X.Liang, Z.P.Wang, S. L. Ban, Journal of Luminescence 87-89,614-616(2000) 6. IO-phonon-assisted tunneling in asymmetric double-barrier structures Zuwei Yan, X.X.Liang, S.L.Ban, Phys Rev B64,12?,125321(2001) 7. Energy levels of a polaron in a finite parabolic quantum well Zhao Feng-Qi, Liang Xi-Xia, Ban Shi-Liang, I.J.M.Phys B 15,5,527-535 (2001) 8. Pressure effect on the binding energies of donors in GaAs/AlxGa1-xAs heterojunctions , S. L. Ban and X. X. Liang，Journal of Luminescence 94-95, 417-420(2001) 9. Note to electron-phonon interaction in polar ternary mixed crystals Journal of Luminescence 94-95, 781-785(2001) 10. Resonant tunneling in semiconductor Multibarrier Heterostructures J Gong, S L Ban, X X Liang Int. J. of Modern Physics B, Vol. 16, No. 30, 4607-4619 (2002) 11. Pressure tuning of strains in Zn1-xCdxSe/ZnSe (x<0.1) single quantum wells Guo Zi-zheng,Liang Xi-xia,Ban Shi-liang, Phys.Lett.A,306,160-165(2002) 12. Pressure-induced... 近期发表的主要学术论文： 1. Interface polarons in a realistic heterojunction potential, S. L. Ban, J. E. Hasbun, Eur. Phys. J B8,453-461(1999) 2. Donor level in a quasi-two dimensional heterojunction system, S. L. Ban, J.E.Hasbun, Solid State Commun. 109,93-98(1999) 3. Bound polarons in a polar semiconductor heterojunction, S. L. Ban, J.E.Hasbun, Phys. Rev. B 59,3,2276-2283(1999) 4. A novel method for quantum transmission across arbitrary potential barriers, S. L. Ban, J.E.Hasbun, X.X. Liang, Journal of Luminescence 87-89,369-371(2000) 5. Bound polarons in ternary mixed crystals, X.X.Liang, Z.P.Wang, S. L. Ban, Journal of Luminescence 87-89,614-616(2000) 6. IO-phonon-assisted tunneling in asymmetric double-barrier structures Zuwei Yan, X.X.Liang, S.L.Ban, Phys Rev B64,12?,125321(2001) 7. Energy levels of a polaron in a finite parabolic quantum well Zhao Feng-Qi, Liang Xi-Xia, Ban Shi-Liang, I.J.M.Phys B 15,5,527-535 (2001) 8. Pressure effect on the binding energies of donors in GaAs/AlxGa1-xAs heterojunctions , S. L. Ban and X. X. Liang，Journal of Luminescence 94-95, 417-420(2001) 9. Note to electron-phonon interaction in polar ternary mixed crystals Journal of Luminescence 94-95, 781-785(2001) 10. Resonant tunneling in semiconductor Multibarrier Heterostructures J Gong, S L Ban, X X Liang Int. J. of Modern Physics B, Vol. 16, No. 30, 4607-4619 (2002) 11. Pressure tuning of strains in Zn1-xCdxSe/ZnSe (x<0.1) single quantum wells Guo Zi-zheng,Liang Xi-xia,Ban Shi-liang, Phys.Lett.A,306,160-165(2002) 12. Pressure-induced increase of exciton-LO-phonon coupling in a Zn1-xCdxSe/ZnSe quantum well, Z.Z.Guo, X.X.Liang, S.L.Ban,,Phys.Stat.Sol(b)238,173-179(2003) 13. Binding energies of excitons in GaAs/AlAs quantum wells under pressure Guojun Zhao, X. X. Liang, S. L. Ban, Modern Physics Letters B, 17(16), 863-870(2003) 14. The effect of Hydrostatic pressure on bound polarons in polar semiconductor heterojunctions Y L Cao, S L Ban, G J Zhao, Modern Physics Letters B, 17(17), 909-919 (2003) 15. Influence of the spatially dependent effective mass on bound polarons in finite parabolic quantum wells,F Q Zhao, X X Liang, S L Ban, Eur. Phys. J.B 33,1,3-8(2003) 16. Pressure effect on the interface excitons in a type-Ⅱ ZnTe/CdSe heterojunction Guo Zi-zheng,Liang Xi-xia,Ban Shi-liang, Modern Phys. Lett. B17,27-28,1425-1435(2003) 17. Binding Energies of Donors in Quantum Wells under Hydrostatic Pressure G.J.Zhao, X.X.Liang and S.L.Ban, Physics Letters A 319,191-197(2003) 18. Effect of electron-phonon interaction on surface states in zinc-blende GaN, AlN, and InN under pressure, Z W Yan, S L Ban, X X Liang, Eur. Phys. J. B 35, 41-47(2003) 19. Pressure dependence of electron-IO-phonon interaction in multi-interface heterostructure systems, Z W Yan, S L Ban, X X Liang, Int. J. of Modern Physics B, Vol. 17, No. 31&32, 6085-6096 (2003 20. Optical vibration modes and electron-phonon interaction in ternary mixed crystals of polar semiconductors，X.X.Liang, S.L.Ban, Chinese Physics,13(1),71-81( 2004) 21. Intermediate-coupling polaron properties in wurtzite nitride semiconductors Z. W. Yan, S. L. Ban, X. X. Liang, Physics Letters A,326,157-165(2004) |
